Anomalous p-channel amorphous oxide transistors based on tin oxide and their complementary circuits

被引：49

作者：

Ou, Chun-Wei ^{[2
]}

Ho, Zhong Yo ^{[3
]}

Chuang, You-Che ^{[2
]}

Cheng, Shiau-Shin ^{[2
]}

Wu, Meng-Chyi ^{[2
]}

Ho, Kuo-Chuan ^{[3
]}

Chu, Chih-Wei ^{[1
,4
]}

机构：

[1] Acad Sinica, Res Ctr Appl Sci, Taipei 11529, Taiwan

[2] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013, Taiwan

[3] Natl Taiwan Univ, Dept Chem Engn, Taipei 10617, Taiwan

[4] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 12期

关键词：

D O I：

10.1063/1.2898217

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this article, we report the fabrication of SnO2 thin film transistors (TFTs) fabricated by reactive evaporation. Different from the previous reports, the fabricated TFTs exhibit p-type conductivity in its undoped form. The postdeposition annealing temperature was tuned to achieve p-channel SnO2 TFTs. The on/ off ratio and the field-effect mobility were similar to 10(3) and 0.011 cm(2)/V s, respectively. To demonstrate inverter circuit, two devices with different threshold voltages were combined and an output gain of 2.8 was achieved. The realization of p-channel oxide TFTs would open up new challenges in the area of transparent electronics. (C) 2008 American Institute of Physics.

引用

页数：3

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