Phonons in low-dimensional systems

被引:6
作者
Fritsch, J [1 ]
机构
[1] Univ Regensburg, Inst Theoret Phys, D-93040 Regensburg, Germany
关键词
D O I
10.1088/0953-8984/13/34/309
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The surfaces of a crystal solid with a given crystallographic orientation are usually described by the two dimensions of their extension. In the case of well-defined periodicity, surface vibrational states are characterized by two-dimensional wavevectors with non-vanishing dispersion in all directions parallel to the surface. Microscopic processes such as rebonding of atoms and adsorption, however, can lead to structural units on a surface that show one- or even zero-dimensional signature. Phonon dispersion curves for clean and adsorbate-covered surfaces of Si and III-V compounds are computed by means of density-functional perturbation theory in the framework of slab-lattice dynamics. These systems show surface phonon modes that clearly have two-, one-, and zero-dimensional character. Vibrational states, which are obvious fingerprints of their structural origin on the surface, are discussed in detail.
引用
收藏
页码:7611 / 7626
页数:16
相关论文
共 26 条
[1]   GREEN-FUNCTION APPROACH TO LINEAR RESPONSE IN SOLIDS [J].
BARONI, S ;
GIANNOZZI, P ;
TESTA, A .
PHYSICAL REVIEW LETTERS, 1987, 58 (18) :1861-1864
[2]   VIBRATIONAL DYNAMICS OF THE IDEALLY H-TERMINATED SI(111) SURFACE [J].
CHABAL, YJ ;
DUMAS, P ;
GUYOTSIONNEST, P ;
HIGASHI, GS .
SURFACE SCIENCE, 1991, 242 (1-3) :524-530
[3]   STRUCTURE AND DYNAMICS OF STRONG CHEMISORPTION ON SI(111) AS MEASURED WITH ATOMIC HELIUM SCATTERING [J].
DOAK, RB .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (05) :1252-1259
[4]   Ab initio calculation of phonons in semiconductor surfaces [J].
Eckl, C ;
Honke, R ;
Fritsch, J ;
Pavone, P ;
Schroder, U .
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1997, 104 (04) :715-720
[5]   Optical characterization of surface electronic and vibrational properties of epitaxial antimony monolayers on III-V (110) surfaces [J].
Esser, N ;
Kopp, M ;
Haier, P ;
Richter, W .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1995, 152 (01) :191-200
[6]   ATOM-SELECTIVE IMAGING OF THE GAAS(110) SURFACE [J].
FEENSTRA, RM ;
STROSCIO, JA ;
TERSOFF, J ;
FEIN, AP .
PHYSICAL REVIEW LETTERS, 1987, 58 (12) :1192-1195
[7]   Ab initio calculation of the phonon dispersion of antimony-covered (110) surfaces of III-V compounds [J].
Fritsch, J ;
Arnold, M ;
Schröder, U .
PHYSICAL REVIEW B, 2000, 61 (24) :16682-16691
[8]   Ab initio calculation of the structure, electronic states, and the phonon dispersion of the Si(100) surface [J].
Fritsch, J ;
Pavone, P .
SURFACE SCIENCE, 1995, 344 (1-2) :159-173
[9]   ABINITIO CALCULATION OF PHONON DISPERSIONS IN SEMICONDUCTORS [J].
GIANNOZZI, P ;
DE GIRONCOLI, S ;
PAVONE, P ;
BARONI, S .
PHYSICAL REVIEW B, 1991, 43 (09) :7231-7242
[10]   SCANNING TUNNELING MICROSCOPY OF SI(001) [J].
HAMERS, RJ ;
TROMP, RM ;
DEMUTH, JE .
PHYSICAL REVIEW B, 1986, 34 (08) :5343-5357