Ab initio calculation of the phonon dispersion of antimony-covered (110) surfaces of III-V compounds

被引:11
作者
Fritsch, J [1 ]
Arnold, M [1 ]
Schröder, U [1 ]
机构
[1] Univ Regensburg, Inst Theoret Phys, D-93040 Regensburg, Germany
关键词
D O I
10.1103/PhysRevB.61.16682
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present the results from nh initio linear-response calculations performed to investigate the surface phonon dispersion of the antimony-covered (110) surfaces of GaAs, GaP, InAs, and InP. Our computations are carried out for a complete monolayer coverage of antimony adsorbed in the epitaxial continued layer structure. The surfaces are described within the slab-supercell approach. Our density-functional formalism is based on the plane-wave pseudopotential method and the local-density approximation. Rie identify characteristic vibrations of the adsorption overlayer, interface modes, and phonons related to those of the pristine surfaces with changed dispersion due to the adsorption. A comparison of the modes computed for the different systems allows us to analyze systematic trends and to study more thoroughly the physical origin of vibrational states occurring on adsorbate-covered and clean III-V(110) surfaces. Our computed phonon frequencies are in good agreement with experimental data.
引用
收藏
页码:16682 / 16691
页数:10
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