Angle-resolved photoemission study of Ga1-xMnxAs -: art. no. 125304

被引：115

作者：

Okabayashi, J ^{[1
]}

Kimura, A

Rader, O

Mizokawa, T

Fujimori, A

Hayashi, T

Tanaka, M

机构：

[1] Univ Tokyo, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan

[2] Univ Tokyo, Dept Complex Sci & Engn, Bunkyo Ku, Tokyo 1130033, Japan

[3] Hiroshima Univ, Dept Solid State Phys, Higashi Ku, Hiroshima 7398526, Japan

[4] BESSY, D-12489 Berlin, Germany

[5] Univ Tokyo, Dept Elect Engn, Bunkyo Ku, Tokyo 1130033, Japan

来源：

PHYSICAL REVIEW B | 2001年 / 64卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.64.125304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Valence-band dispersions in Ga1-xMnxAs along the Gamma-Delta -X line (k parallel to [001]) are obtained by angle-resolved photoemission spectroscopy. Compared with the spectra of GaAs, a small energy shift caused by Mn doping is observed for one of the valence bands. In addition, states are observed near the Fermi level in Ga1-xMnxAs. These states show no clear dispersions and behave like an impurity band induced by Mn doping.

引用

页数：4

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