Extending the reliability scaling limit of SiO2 through plasma nitridation

被引：31

作者：

Nicollian, PE ^{[1
]}

Baldwin, GC ^{[1
]}

Eason, KN ^{[1
]}

Grider, DT ^{[1
]}

Hattangady, SV ^{[1
]}

Hu, JC ^{[1
]}

Hunter, WR ^{[1
]}

Rodder, M ^{[1
]}

Rotondaro, ALP ^{[1
]}

机构：

[1] Texas Instruments Inc, Silicon Technol Dev, Dallas, TX 75265 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904376

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a manufacturable remote plasma nitridation process that significantly extends the reliability scaling limit of SiO2 based gate dielectrics.

引用

页码：545 / 548

页数：4

共 17 条

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