Complete theoretical analysis of the Kaplan-Solomon-Mott mechanism of spin-dependent recombination in semiconductors

The Kaplan-Solomon-Mott mechanism of spin-dependent recombination is considered theoretically. Quantum kinetic equations describing the recombination of charge carriers in the presence of both static and high-frequency magnetic fields are solved in an analytical and computational manner. No restrictions are imposed on the fields, recombination and dissociation rates, and spin relaxation time. Assuming that the transversal relaxation time is equal to the longitudinal relaxation time, a spin-dependent part of the recombination rate showing itself in the moment of spin resonance onset is calculated. A nonmonotonic field dependence of the spin-dependent part of the recombination rate is found. Various types of resonance peaks are shown to be possible. Physical factors affecting the shape of the resonance peak are found. Spin-dependent effects taking place within the range of low magnetic fields are examined in detail.