SPIN-DEPENDENT SHOCKLEY-READ RECOMBINATION OF ELECTRONS AND HOLES IN INDIRECT-BAND-GAP SEMICONDUCTOR P-N-JUNCTION DIODES

This paper presents a new model for spin-dependent recombination and generation processes based on the electrical detection of magnetic resonance in semiconductor p-n junction diodes. Based on a modified Shockley-Read recombination statistics, this model differs from those models previously proposed in that the spin-dependent enhancement of free-carrier capture processes can occur directly at a paramagnetic deep defect without the need for other defects nearby. This model incorporates singlet-triplet mechanisms of existing models, but is shown to be consistent with new experimental results which indicate the absence of any adjacent trapping centers.