Behavior of the phonon gas in restricted geometries at low temperatures

被引:18
作者
Anghel, DV
Manninen, M
机构
[1] Univ Jyvaskyla, Dept Phys, SF-40351 Jyvaskyla, Finland
[2] Inst Phys & Nucl Engn Horia Hulubei, RO-76900 Bucharest, Romania
来源
PHYSICAL REVIEW B | 1999年 / 59卷 / 15期
关键词
D O I
10.1103/PhysRevB.59.9854
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In a previous paper [D.V. Anghel, J. P. Pekola, M. M. Leivo, J. K. Suoknuuti, and M.Manninen, Phys. Rev. Lett. 81, 2958 (1998)], we presented a formalism suitable to describe the thermal properties of the phonon gas in ultrathin membranes. We extend here the formalism to the case of narrow objects, such as wires or "bridges," and to the case of small nanoscopical objects. This will allow us to see crossovers between three-, two-, one- and zero-dimensional distribution of the phonon gas. [S0163-1829(99)10915-9].
引用
收藏
页码:9854 / 9857
页数:4
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