Direct gap electroluminescence from Si/Ge1-ySny p-i-n heterostructure diodes

被引：90

作者：

Roucka, R. ^{[1
]}

Mathews, J. ^{[2
]}

Beeler, R. T. ^{[1
]}

Tolle, J. ^{[1
]}

Kouvetakis, J. ^{[1
]}

Menendez, J. ^{[2
]}

机构：

[1] Arizona State Univ, Dept Chem & Biochem, Tempe, AZ 85287 USA

[2] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 06期

基金：

美国国家科学基金会;

关键词：

ROOM-TEMPERATURE; GERMANIUM;

D O I：

10.1063/1.3554747

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electroluminescence spectra from Si/Ge1-ySny heterostructure diodes are reported. The observed emission is dominated by direct gap optical transitions and displays the expected compositional dependence of the peak energy. Weaker indirect gap emission is also observed, and their energies are consistent with a closing of the indirect-direct separation as the Sn concentration is increased. The intensity of the EL spectra shows a superlinear dependence on the injection current, which is modeled using a Van Roosbroeck-Shockley expression for the emission intensity. The model assumes quasiequilibrium conditions for the electrons populating the different valleys in the conduction band of Ge. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3554747]

引用

页数：3

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