Competitiveness between direct and indirect radiative transitions of Ge

被引：56

作者：

Cheng, T. -H. ^{[1
,2
]}

Ko, C. -Y. ^{[2
,3
]}

Chen, C. -Y. ^{[2
,3
]}

Peng, K. -L. ^{[2
,3
]}

Luo, G. -L. ^{[4
]}

Liu, C. W. ^{[1
,2
,3
,4
]}

Tseng, H. -H. ^{[5
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

[3] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan

[4] Natl Nano Device Lab, Hsinchu 30078, Taiwan

[5] Texas State Univ, Ingram Sch Engn, San Marcos, TX 78666 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 09期

关键词：

electroluminescence; elemental semiconductors; germanium; optical pumping; photoluminescence; p-n junctions; semiconductor diodes; ROOM-TEMPERATURE ELECTROLUMINESCENCE; LIGHT-EMITTING-DIODES;

D O I：

10.1063/1.3352048

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Both direct and indirect transitions of photoluminescence and electroluminescence are observed in a Ge n(+)p diode. The relative intensity of direct radiative recombination with respect to indirect radiative recombination increases with the increase in the optical pumping power, injection current density, and temperature. The increase in electron population in the direct valley is responsible for the enhancement. The spectra can be fitted by the combination of direct and indirect transition models. The direct radiative transition rate is similar to 1600 times of the indirect transition, estimated by electroluminescence and photoluminescence spectra near room temperature.

引用

页数：3

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