Electroluminescence from Ge on Si substrate at room temperature

被引：49

作者：

Hu, Weixuan ^{[1
]}

Cheng, Buwen ^{[1
]}

Xue, Chunlai ^{[1
]}

Xue, Haiyun ^{[1
]}

Su, Shaojian ^{[1
]}

Bai, Anqi ^{[1
]}

Luo, Liping ^{[1
]}

Yu, Yude ^{[1
]}

Wang, Qiming ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 09期

基金：

中国国家自然科学基金; 国家高技术研究发展计划(863计划);

关键词：

DEPENDENCE; GAP;

D O I：

10.1063/1.3216577

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A Ge/Si heterojunction light emitting diode with a p(+)-Ge/i-Ge/N+-Si structure was fabricated using the ultrahigh vacuum chemical vapor deposition technology on N+-Si substrate. The device had a good I-V rectifying behavior. Under forward bias voltage ranging from 1.1 to 2.5 V, electroluminescence around 1565 nm was observed at room temperature. The mechanism of the light emission is discussed by the radiative lifetime and the scattering rate. The results indicate that germanium is a potential candidate for silicon-based light source material. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3216577]

引用

页数：3

共 17 条

[1] SELF-ABSORPTION EFFECTS ON RADIATIVE LIFETIME IN GAAS-GAALAS DOUBLE HETEROSTRUCTURES [J].