Efficiency limits for single junction and tandem solar cells

被引：296

作者：

Meillaud, F. ^{[1
]}

Shah, A. ^{[1
]}

Droz, C. ^{[1
]}

Vallat-Sauvain, E. ^{[1
]}

Miazza, C. ^{[1
]}

机构：

[1] Univ Neuchatel, Inst Microtechnol, CH-2000 Neuchatel, Switzerland

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2006年 / 90卷 / 18-19期

关键词：

amorphous and microcrystalline silicon; single p-n and p-i-n junction solar cells; tandem solar cells; efficiency limits;

D O I：

10.1016/j.solmat.2006.06.002

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Basic limitations of single-junction and tandem p-n and p-i-n diodes are established from thermodynamical considerations on radiative recombination and semi-empirical considerations on the classical diode equations. These limits are compared to actual values of short-circuit current open-circuit voltage, fill factor and efficiency for amorphous (a-Si:H) and microcrystalline (mu c-Si:H) silicon solar cells. For single-junction cells, major efficiency gains should be achievable by increasing the short-circuit current density by better light trapping. The limitations of p-i-n junctions are estimated from recombination effects in the intrinsic layer. The efficiency of double-junction cells is presented as a function of the energy gap of top and bottom cells, confirming the 'micromorph' tandem (a-Si:H/mu c-Si:H) as an optimum combination of tandem solar cells. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：2952 / 2959

页数：8

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