Room-temperature electroluminescence from electron-hole plasmas in the metal-oxide-silicon tunneling diodes

被引：88

作者：

Liu, CW ^{[1
]}

Lee, MH ^{[1
]}

Chen, MJ ^{[1
]}

Lin, IC ^{[1
]}

Lin, CF ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 12期

关键词：

D O I：

10.1063/1.126081

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An electron-hole plasma recombination model is used to fit the room-temperature electroluminescence from metal-oxide-silicon tunneling diodes. The relatively narrow line shape in the emission spectra can be understood by the quasi-Fermi level positions of electrons and holes, which both lie in the band gap. This model also gives a narrower band gap than that of bulk silicon. The surface band bending in the Si/oxide interface is responsible for this energy gap reduction. (C) 2000 American Institute of Physics. [S0003-6951(00)04512-5].

引用

页码：1516 / 1518

页数：3

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