GROWTH AND BAND-GAP OF STRAINED (110) SI1-XGEX LAYERS ON SILICON SUBSTRATES BY CHEMICAL-VAPOR-DEPOSITION

被引：24

作者：

LIU, CW

STURM, JC

LACROIX, YRJ

THEWALT, MLW

PEROVIC, DD

机构：

[1] SIMON FRASER UNIV,DEPT PHYS,BURNABY V5A 1S6,BC,CANADA

[2] UNIV TORONTO,DEPT MET & MAT SCI,TORONTO M5S 1A4,ONTARIO,CANADA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 01期

关键词：

D O I：

10.1063/1.113079

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report chemical vapor deposition growth of strained Si1-xGex alloy layers on [110] Si substrates. Compared to the same growth conditions on [100] substrates, a slightly lower Ge composition and a much lower growth rate was observed. From photoluminescence measurements, the band gap of these films for 0.16 less-than-or-equal-to x less-than-or-equal-to 0.43 is evaluated and compared to theory. Finally, a surprisingly large ''no-phonon'' replica line strength ratio was observed as compared with-that observed in [100] layers.

引用

页码：76 / 78

页数：3

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