BAND-EDGE EXCITON LUMINESCENCE FROM SI STRAINED SI1-XGEX/SI STRUCTURES

被引：8

作者：

STURM, JC ^{[1
]}

XIAO, X ^{[1
]}

SCHWARTZ, PV ^{[1
]}

LIU, CW ^{[1
]}

LENCHYSHYN, LC ^{[1
]}

THEWALT, MLW ^{[1
]}

机构：

[1] SIMON FRASER UNIV,DEPT PHYS,BURNABY V5A 1S6,BC,CANADA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 04期

关键词：

D O I：

10.1116/1.586174

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Well-resolved band-edge exciton photoluminescence has been observed in strained Si1-xGex, layers grown on Si(100) by rapid thermal chemical vapor deposition. The luminescence is due to shallow-impurity bound excitons at low temperatures (under 20 K) and is an excellent probe of quantum confinement effects in narrow quantum wells. At higher temperatures, the luminescence is due to free excitons or electron hole plasmas, depending on the pump power. Experiments with single and multiple quantum well structures indicate that most of the Si1-xGex, luminescence is from carriers which were generated in the silicon substrate and subsequently were trapped in the quantum wells.

引用

页码：1998 / 2001

页数：4

共 21 条

[1] ELECTRON-HOLE PLASMA IN PHOTO-EXCITED INDIRECT-GAP ALXGA1-XAS [J].

COHEN, E ;

STURGE, MD ;

OLMSTEAD, MA ;

LOGAN, RA .

PHYSICAL REVIEW B, 1980, 22 (02) :771-777

[2]

GROSS EF, 1973, FIZ TVERD TELA+, V14, P1732

[3]

KENNEDY TAB, COMMUNICATION

[4] ISOELECTRONIC BOUND EXCITON EMISSION FROM SI-RICH SILICON-GERMANIUM ALLOYS [J].

MODAVIS, RA ;

HALL, DG ;

BEVK, J ;

FREER, BS ;

FELDMAN, LC ;

WEIR, BE .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :954-956

[5] INTENSE PHOTOLUMINESCENCE BETWEEN 1.3-MU AND 1.8-MU-M FROM STRAINED SI1-XGEX ALLOYS [J].

NOEL, JP ;

ROWELL, NL ;

HOUGHTON, DC ;

PEROVIC, DD .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1037-1039

[6]

NORTHROP GA, 1990, MATER RES SOC SYMP P, V163, P343

[7] OBSERVATION OF DIRECT BAND-GAP PROPERTIES IN GENSIM STRAINED-LAYER SUPERLATTICES [J].

OKUMURA, H ;

MIKI, K ;

MISAWA, S ;

SAKAMOTO, K ;

SAKAMOTO, T ;

YOSHIDA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11) :L1893-L1895

[8] INDIRECT BAND-GAP OF COHERENTLY STRAINED GEXSI1-X BULK ALLOYS ON (001) SILICON SUBSTRATES [J].

PEOPLE, R .

PHYSICAL REVIEW B, 1985, 32 (02) :1405-1408

[9] DIRECT TRANSITION ENERGIES IN STRAINED 10-MONOLAYER GE/SI SUPERLATTICES [J].

SCHMID, U ;

CHRISTENSEN, NE ;

CARDONA, M .

PHYSICAL REVIEW LETTERS, 1990, 65 (20) :2610-2610

[10] AUGER LIFETIMES FOR EXCITONS BOUND TO NEUTRAL DONORS AND ACCEPTORS IN SI [J].

SCHMID, W .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 84 (02) :529-540

← 1 2 3 →