Direct-gap photoluminescence with tunable emission wavelength in Ge1-ySny alloys on silicon

被引：165

作者：

Mathews, J. ^{[1
]}

Beeler, R. T. ^{[2
]}

Tolle, J. ^{[2
]}

Xu, C. ^{[1
]}

Roucka, R. ^{[2
]}

Kouvetakis, J. ^{[2
]}

Menendez, J. ^{[1
]}

机构：

[1] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

[2] Arizona State Univ, Dept Chem & Biochem, Tempe, AZ 85287 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 22期

基金：

美国国家科学基金会;

关键词：

BAND-GAP; STRAIN;

D O I：

10.1063/1.3521391

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Direct-gap photoluminescence has been observed at room temperature in Ge1-ySny alloys grown on (001) Si substrates. The emission wavelength is tunable over a 90 meV (200 nm) range by increasing the Sn concentration from y=0 to y=0.03. A weaker feature at lower energy is assigned to the indirect gap transitions, and the separation between the direct and indirect emission peaks is found to decrease as a function of y, as expected for these alloys. These results suggest that Ge1-ySny alloys represent an attractive alternative to Ge for the fabrication of laser devices on Si. (C) 2010 American Institute of Physics. [doi:10.1063/1.3521391]

引用

收藏

页数：3

相关论文

共 16 条

[1] Ge-Sn semiconductors for band-gap and lattice engineering [J].

Bauer, M ;

Taraci, J ;

Tolle, J ;

Chizmeshya, AVG ;

Zollner, S ;

Smith, DJ ;

Menendez, J ;

Hu, CW ;

Kouvetakis, J .

APPLIED PHYSICS LETTERS, 2002, 81 (16) :2992-2994

[2]

Cheng Szu-Lin, 2009, Opt Express, V17, P10019

[3] Competitiveness between direct and indirect radiative transitions of Ge [J].

Cheng, T. -H. ;

Ko, C. -Y. ;

Chen, C. -Y. ;

Peng, K. -L. ;

Luo, G. -L. ;

Liu, C. W. ;

Tseng, H. -H. .

APPLIED PHYSICS LETTERS, 2010, 96 (09)

[4] Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors [J].

D'Costa, V. R. ;

Fang, Y. -Y. ;

Tolle, J. ;

Kouvetakis, J. ;

Menendez, J. .

THIN SOLID FILMS, 2010, 518 (09) :2531-2537

[5] Sn-alloying as a means of increasing the optical absorption of Ge at the C- and L-telecommunication bands [J].

D'Costa, Vijay R. ;

Fang, Yanyan ;

Mathews, Jay ;

Roucka, Radek ;

Tolle, John ;

Menendez, Jose ;

Kouvetakis, John .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (11)

[6] Optical critical points of thin-film Ge1-ySny alloys:: A comparative Ge1-ySny/Ge1-xSix study [J].

D'Costa, VR ;

Cook, CS ;

Birdwell, AG ;

Littler, CL ;

Canonico, M ;

Zollner, S ;

Kouvetakis, J ;

Menéndez, J .

PHYSICAL REVIEW B, 2006, 73 (12)

[7] Perfectly tetragonal, tensile-strained Ge on Ge1-ySny buffered Si(100) [J].

Fang, Y. -Y. ;

Tolle, J. ;

Roucka, R. ;

Chizmeshya, A. V. G. ;

Kouvetakis, John ;

D'Costa, V. R. ;

Menendez, Jose .

APPLIED PHYSICS LETTERS, 2007, 90 (06)

[8]

Huo Y., 2009, Proceedings of the 2009 6th IEEE International Conference on Group IV Photonics. GFP 2009, P265, DOI 10.1109/GROUP4.2009.5338361

[9] Strain-induced band gap shrinkage in Ge grown on Si substrate [J].

Ishikawa, Y ;

Wada, K ;

Cannon, DD ;

Liu, JF ;

Luan, HC ;

Kimerling, LC .

APPLIED PHYSICS LETTERS, 2003, 82 (13) :2044-2046

[10] Ge-on-Si laser operating at room temperature [J].

Liu, Jifeng ;

Sun, Xiaochen ;

Camacho-Aguilera, Rodolfo ;

Kimerling, Lionel C. ;

Michel, Jurgen .

OPTICS LETTERS, 2010, 35 (05) :679-681