Compositionally induced valence-band offset at the grain boundary of polycrystalline chalcopyrites creates a hole barrier

被引:126
作者
Persson, C [1 ]
Zunger, A
机构
[1] Royal Inst Technol, Dept Mat Sci & Engn, SE-10044 Stockholm, Sweden
[2] Natl Renewable Energy Lab, Golden, CO 80401 USA
关键词
D O I
10.1063/1.2132537
中图分类号
O59 [应用物理学];
学科分类号
摘要
First-principles calculations of model grain boundaries (GBs) in CuInSe2 and CaGaSe2 show that cation-terminated GBs have a valence-band offset with respect to the grain interior (GI). This offset repels holes from the GBs, thus depriving electrons there from recombination at the GB defects. Anion-terminated GBs have no such valence offset. CuGaSe2 has, in addition, a conduction-band offset at the GB/GI interface, attracting electrons to the GBs. These features explain how polycrystalline chalcopyrite solar cells could outperform their crystalline counterparts. (c) 2005 American Institute of Physics.
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页码:1 / 3
页数:3
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