Electrical transport properties of single wall carbon nanotube/polyurethane composite based field effect transistors fabricated by UV-assisted direct-writing technology

We report on the fabrication and transport properties of single-walled carbon nanotube (SWCNT)/polyurethane (PU) nanocomposite microfiber-based field effect transistors (FETs). UV-assisted direct-writing technology was used, and microfibers consisting of cylindrical micro-rods, having different diameters and various SWCNT loads, were fabricated directly onto SiO2/Si substrates in a FET scheme. The room temperature dc electrical conductivities of these microfibers were shown to increase with respect to the SWCNT concentrations in the nanocomposite, and were about ten orders of magnitude higher than that of the pure polyurethane, when the SWCNT load ranged from 0.1 to 2.5 wt% only. Our results show that for SWCNT loads <= 1.5 wt%, all the microfibers behave as a FET with p-type transport. The resulting FET exhibited excellent performance, with an I-on/I-off ratio of 10(5) and a maximum on-state current (Ion) exceeding 70 mu A. Correlations between the FET performance, SWCNTs concentration, and the microfiber diameters are also discussed.