Cutoff frequency and propagation delay time of 1.5-nm gate oxide CMOS

被引：26

作者：

Momose, HS ^{[1
]}

Morifuji, E

Yoshitomi, T

Ohguro, T

Saito, M

Iwai, H

机构：

[1] Toshiba Co Ltd, Yokohama, Kanagawa 2358522, Japan

[2] Tokyo Inst Technol, Yokohama, Kanagawa 2268502, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 06期

关键词：

CMOS; cutoff frequency; gate oxide; MOSFET; propagation delay time; scaling;

D O I：

10.1109/16.925243

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The high-frequency AC characteristics of 1.5-nm direct-tunneling gate SiO2 CMOS are described. Very high cutoff frequencies of 170 GHz and 245 GHz were obtained for 0.08-mum and 0.06-mum gate length nMOSFETs at room temperature, Cutoff frequency of 65 GHz was obtained for 0.15-mum gate length pMOSFETs using 1.5-nm gate SiO2 for the first time. The normal oscillations of the 1.5-nm gate SiO2 CMOS ring oscillators were also confirmed. In addition, this paper investigates the cutoff frequency and propagation delay time in recent small-geometry CMOS and discusses the effect of gate oxide thinning. The importance of reducing the gate oxide thickness in the direct-tunneling regime is discussed for sub-0.1-mum gate length CMOS in terms of high-frequency, high-speed operation.

引用

页码：1165 / 1174

页数：10