Spatially controlled formation of an atomically flat Si(001) surface by annealing with a direct current in an ultrahigh vacuum

We propose a new technique for the spatially controlled formation of an atomically flat large Si(001) surface obtained by annealing with a direct current in an ultrahigh vacuum. This technique uses barrier structures to depress step movement for spatial control and enables the fabrication of a large atomic-step-free Si(001) surface at the desired position after annealing. We have also demonstrated spatially controlled formation using artificial step bands as barrier structures. Single atomic round Si(001) planes of about 4 mu m in diameter were obtained by annealing the 6 mu m square patterned substrate at 1000 degrees C for 2 h.