Cl2-based dry etching of the AlGaInN system in inductively coupled plasmas

被引：20

作者：

Cho, H ^{[1
]}

Vartuli, CB

Abernathy, CR

Donovan, SM

Pearton, SJ

Shul, RJ

Han, J

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 12期

关键词：

D O I：

10.1016/S0038-1101(98)00225-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cl-2-Based inductively coupled plasmas with low additional d.c. self-biases (-100 V) produce convenient etch rates (500-1500 Angstrom.min(-1)) for GaN, AlN, InN, InAlN and InGaN. A systematic study of the effects of additive gas (Ar, N-2 H-2), discharge composition and ICP source power and chuck power on etch rate and surface morphology has been performed. The general trends are to go through a maximum in etch rate with percent Cl-2 in the discharge for all three mixtures and to have an increase (decrease) in etch rate with source power (pressure). Since the etching is strongly ion-assisted, anisotropic pattern transfer is readily achieved. Maximum etch selectivities of approximately 6 for InN over the other nitrides were obtained. (C) 1998 Published by Elsevier Science Ltd. All rights reserved.

引用

页码：2277 / 2281

页数：5

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