Correlated Surface Roughening During Photoresist Development

被引:1
作者
Mack, Chris A. [1 ]
机构
[1] Lithoguru Com, Austin, TX 78703 USA
来源
ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXIX | 2012年 / 8325卷
关键词
stochastic simulation; resist development; dynamical scaling; line-edge roughness; LER; LWR;
D O I
10.1117/12.915360
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
BACKGROUND: Previous simulation work has shown that uncorrelated Gaussian randomness in the development rate produces surface roughness in a resist that obeys Family-Viscek scaling in the KPZ universality class. However, more rigorous mesoscale simulations produce anomalous scaling. METHODS: Using a stochastic resist simulator, the dynamical roughness behavior of resist development in 2D is studied with various amounts of correlation in the underlying development rate randomness. RESULTS: For length scales greater than about 5 xi (the correlation length of the underlying randomness), the dynamical roughness behavior obeys standard Family-Viscek scaling within the KPZ universality class. For length scales on the order of a few xi or less, the mixed correlations of both xi and xi(vertical bar vertical bar) make the results anomalous. CONCLUSIONS: It appears that correlations can explain at least some of the anomalous scaling behavior observed previously through the use of mesoscale simulations. Simple scaling relationship can still apply, however, over appropriate length scales.
引用
收藏
页数:14
相关论文
共 13 条
[1]   Evolution of resist roughness during development: stochastic simulation and dynamic scaling analysis [J].
Constantoudis, Vassilios ;
Patsis, George P. ;
Gogolides, Evangelos .
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2010, 9 (04)
[2]   SCALING OF THE ACTIVE ZONE IN THE EDEN PROCESS ON PERCOLATION NETWORKS AND THE BALLISTIC DEPOSITION MODEL [J].
FAMILY, F ;
VICSEK, T .
JOURNAL OF PHYSICS A-MATHEMATICAL AND GENERAL, 1985, 18 (02) :L75-L81
[3]   Resist blur and line edge roughness [J].
Gallatin, GM .
Optical Microlithography XVIII, Pts 1-3, 2005, 5754 :38-52
[4]  
Mack C. A., 2007, FUNDAMENTAL PRINCIPL, P260
[5]  
Mack C. A., 2011, SPIE, V7972
[6]   Stochastic exposure kinetics of extreme ultraviolet photoresists: simulation study [J].
Mack, Chris A. ;
Thackeray, James W. ;
Biafore, John J. ;
Smith, Mark D. .
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2011, 10 (03)
[7]   Stochastic modeling of photoresist development in two and three dimensions [J].
Mack, Chris A. .
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2010, 9 (04)
[8]   Stochastic modeling in lithography: use of dynamical scaling in photoresist development [J].
Mack, Chris A. .
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2009, 8 (03)
[9]   Stochastic modeling in lithography: autocorrelation behavior of catalytic reaction-diffusion systems [J].
Mack, Chris A. .
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2009, 8 (02)
[10]   Exposure dose dependence on line edge roughness of a latent image in electron beam/extreme ultraviolet lithographies studied by Monte Carlo technique [J].
Saeki, Alkinori ;
Kozawa, Takahiro ;
Tagawa, Seiichi ;
Cao, Heidi B. ;
Deng, Hai ;
Leeson, Michael J. .
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2007, 6 (04)