Exposure dose dependence on line edge roughness of a latent image in electron beam/extreme ultraviolet lithographies studied by Monte Carlo technique

被引：21

作者：

Saeki, Alkinori

Kozawa, Takahiro ^{[1
]}

Tagawa, Seiichi ^{[1
]}

Cao, Heidi B. ^{[2
]}

Deng, Hai ^{[2
]}

Leeson, Michael J. ^{[2
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan

[2] Intel Corp, Hillsboro, OR 97124 USA

来源：

JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS | 2007年 / 6卷 / 04期

关键词：

lithography; electron beams; simulations; radiation chemistry; diffusion;

D O I：

10.1117/1.2792178

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Of great importance in post-optical lithographies, such as electron beam (EB) and extreme ultraviolet, is the improvement of line edge roughness or line width roughness of patterned resists. We provide an exposure dose dependence on LER of a latent image in chemically amplified EB resist from 1 to 50 mu C/cm(2). By using a Monte Carlo simulation and empirical equations, the effects of exposure dose and amine concentration on LER are investigated in terms of shot noise and image contrast. We make clear the correlation between LER and the fluctuation of the initial number of acid molecules generated in resists. (C) 2007 Society of Photo-Optical Instrumentation Engineers.

引用

页数：6

共 25 条

[1] Sources of line-width roughness for EUV resists [J].