High speed carrier injection 18 Gb/s silicon micro-ring electro-optic modulator

被引：96

作者：

Manipatruni, Sasikanth ^{[1
]}

Xu, Qianfan ^{[1
]}

Schmidt, Bradley ^{[1
]}

Shakya, Jagat ^{[1
]}

Lipson, Michal ^{[1
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/LEOS.2007.4382517

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We experimentally demonstrate electrooptic modulation in silicon at 18 Gbps (NRZ) in a micro-ring of 12 micron diameter using a pre-emphasis technique. Device simulations indicate that this technique can extend the bit rate to 40 G bps.

引用

页码：537 / 538

页数：2

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