12.5 Gbit/s carrier-injection-based silicon micro-ring silicon modulators

被引：705

作者：

Xu, Qianfan ^{[1
]}

Manipatruni, Sasikanth ^{[1
]}

Schmidt, Brad ^{[1
]}

Shakya, Jagat ^{[1
]}

Lipson, Michal ^{[1
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

OPTICS EXPRESS | 2007年 / 15卷 / 02期

关键词：

D O I：

10.1364/OE.15.000430

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We show a scheme for achieving high-speed operation for carrier-injection based silicon electro-optical modulator, which is optimized for small size and high modulation depth. The performance of the device is analyzed theoretically and a 12.5-Gbit/s modulation with high extinction ratio > 9dB is demonstrated experimentally using a silicon micro-ring modulator. (c) 2007 Optical Society of America.

引用

页码：430 / 436

页数：7

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