High-rate magnetron sputtering

被引：45

作者：

Musil, J ^{[1
]}

Rajsky, A ^{[1
]}

Bell, AJ ^{[1
]}

Matous, J ^{[1
]}

Cepera, M ^{[1
]}

Zeman, J ^{[1
]}

机构：

[1] MIL TECH INST, BRNO 60200, CZECH REPUBLIC

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1996年 / 14卷 / 04期

关键词：

D O I：

10.1116/1.580045

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This article reports on the process of high-rate magnetron sputtering of solid materials using an unbalanced magnetron with extremely high target power densities of up to 150 W cm(-2). Particular attention is devoted to a comparison of sputtering in the 10(-1) Pa range, low pressure sputtering (<10(-1) Pa), and self-sputtering. The advantages and drawbacks of the sputtering process at different pressures are critically analyzed. The extinction pressure measured as a function of the magnetron discharge current for the magnetron discharge of Cu, Ag, and Ti targets is given. Deposition rates and selected properties of Ti and Cu films are also reported. (C) 1996 American Vacuum Society.

引用

页码：2187 / 2191

页数：5

共 7 条

[1] COPPER SELF-SPUTTERING BY PLANAR MAGNETRON [J].