Low-temperature dry etching of InP by inductively coupled plasma using HI/Cl2

被引：10

作者：

Matsutani, A

Ohtsuki, H

Koyama, F

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 227, Japan

[2] Samco Int Inc, Fujimi Ku, Kyoto 6128443, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 12A期

关键词：

HI; Cl-2; InP; inductively coupled plasma (ICP); dry etching;

D O I：

10.1143/JJAP.42.L1414

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated vertical and smooth inductively coupled plasma (ICP) dry etching of InP using HI/Cl-2 gasses at a low process temperature of 90degreesC. We measured the etching rate by varying bias power. A small flow rate of HI was required to obtain vertical profiles. We consider that HI/Cl-2-ICP etching is useful in InP-based device fabrication with a resist mask.

引用

页码：L1414 / L1415

页数：2

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