REACTIVE-ION-BEAM ETCHING OF INP IN A CHLORINE-HYDROGEN MIXTURE

[1] BOSCH MA, 1981, APPL PHYS LETT, V38, P264, DOI 10.1063/1.92338

[2] MICROWAVE CL2/H2 DISCHARGES FOR HIGH-RATE ETCHING OF INP [J]. ELECTRONICS LETTERS, 1992, 28 (18) : 1749 - 1750

[3] COMPARISON BETWEEN ETCHING IN CL2 AND BCL3 FOR COMPOUND SEMICONDUCTORS USING A MULTIPOLAR ELECTRON-CYCLOTRON RESONANCE SOURCE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06): : 2703 - 2707

[4] REACTIVE ION ETCHING OF INP, INGAAS, INALAS - COMPARISON OF C2H6/H-2 WITH CCL2F2/O-2 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (01): : 57 - 67

[5] PEARTON SJ, 1990, J ELECTROCHEM SOC, V137, P3138

[6] SMOOTH VERTICAL ETCHING OF ALGAINP BY CL2 REACTIVE ION-BEAM ETCHING [J]. ELECTRONICS LETTERS, 1993, 29 (02) : 190 - 192

[7] SMOOTH AND VERTICAL INP REACTIVE ION-BEAM ETCHING WITH CL2 ECR PLASMA [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (5B): : L655 - L657

[1] BOSCH MA, 1981, APPL PHYS LETT, V38, P264, DOI 10.1063/1.92338

[2] MICROWAVE CL2/H2 DISCHARGES FOR HIGH-RATE ETCHING OF INP [J]. ELECTRONICS LETTERS, 1992, 28 (18) : 1749 - 1750

[3] COMPARISON BETWEEN ETCHING IN CL2 AND BCL3 FOR COMPOUND SEMICONDUCTORS USING A MULTIPOLAR ELECTRON-CYCLOTRON RESONANCE SOURCE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06): : 2703 - 2707

[4] REACTIVE ION ETCHING OF INP, INGAAS, INALAS - COMPARISON OF C2H6/H-2 WITH CCL2F2/O-2 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (01): : 57 - 67

[5] PEARTON SJ, 1990, J ELECTROCHEM SOC, V137, P3138

[6] SMOOTH VERTICAL ETCHING OF ALGAINP BY CL2 REACTIVE ION-BEAM ETCHING [J]. ELECTRONICS LETTERS, 1993, 29 (02) : 190 - 192

[7] SMOOTH AND VERTICAL INP REACTIVE ION-BEAM ETCHING WITH CL2 ECR PLASMA [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (5B): : L655 - L657