Vibrating capacitor method in the development of semiconductor gas sensors

被引:9
作者
Mizsei, J [1 ]
机构
[1] Budapest Univ Technol & Econ, Dept Electron Devices, H-1521 Budapest, Hungary
关键词
gas sensors; semiconductor sensors; vibrating capacitor; work function; chemical picture; surface potential; interface potential;
D O I
10.1016/j.tsf.2005.04.021
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Adsorption usually results in work function shifts on catalytically active surfaces such as semiconductor gas sensors. The purpose of the present article is to summarise the capabilities of the vibrating capacitor from the simplest adsorption-induced work function tests to the scanning, vibrating, capacitor-yielded olfactory pictures and other chemical pictures. After a brief history and review of theoretical bases, the latest results will be discussed in detail. Olfactory pictures from semiconductor surfaces give a new chance to improve the selectivity of gas analysis. Chemical pictures from thin SnO2 layers produced by atomic layer epitaxy reveal the inhomogeneities of the technology. CPD maps taken from Pd nanolayer (activator)-covered surfaces help to find the best layer-depositing parameters for the activation process of the thin semiconductor gas sensor films. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:17 / 21
页数:5
相关论文
共 20 条
[1]   Low cost PC based scanning Kelvin probe [J].
Baikie, ID ;
Estrup, PJ .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1998, 69 (11) :3902-3907
[2]  
Bârsan N, 2003, J PHYS-CONDENS MAT, V15, pR813, DOI 10.1088/0953-8984/15/20/201
[3]   In-situ monitoring of surface chemistry and charge transfer at semiconductor surfaces [J].
Fefer, E ;
Kronik, L ;
Leibovitch, M ;
Shapira, Y ;
Riedl, W .
APPLIED SURFACE SCIENCE, 1996, 104 :61-67
[4]   ELECTRON THEORY OF THIN-FILM GAS SENSORS [J].
GEISTLINGER, H .
SENSORS AND ACTUATORS B-CHEMICAL, 1993, 17 (01) :47-60
[5]   Study of adsorption of oxygen on β-Al2O3+Au and β-Al2O3+Pt -: Work function measurements -: proposition of a model [J].
Guillet, N ;
Rives, A ;
Lalauze, R ;
Pijolat, C .
APPLIED SURFACE SCIENCE, 2003, 210 (3-4) :286-292
[6]   A p- to n-transition on α-Fe2O3-based thick film sensors studied by conductance and work function change measurements [J].
Gurlo, A ;
Sahm, M ;
Oprea, A ;
Barsan, N ;
Weimar, U .
SENSORS AND ACTUATORS B-CHEMICAL, 2004, 102 (02) :291-298
[7]  
JORDAN AG, 1978, STUDIES SEMICONDUCTI
[8]  
Kelvin L., 1898, PHILOS MAG, V46, P82
[9]  
Marsh, 2002, MATER TODAY, V5, P36
[10]   Investigation of Fermi-level pinning at silicon/porous- silicon interface by vibrating capacitor and surface photovoltage measurements [J].
Mizsei, J ;
Shrair, JA ;
Zólomy, I .
APPLIED SURFACE SCIENCE, 2004, 235 (03) :376-388