Scanning tunneling microscopy studies of strain relaxation and misfit dislocations in InAs layers grown on GaAs(110) and GaAs(111)A

被引：20

作者：

Belk, JG

Sudijono, JL

Yamaguchi, H

Zhang, XM

Pashley, DW

McConville, CF

Jones, TS

Joyce, BA

机构：

[1] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,DEPT MAT,LONDON SW7 2AY,ENGLAND

[2] UNIV WARWICK,DEPT PHYS,COVENTRY CV4 7AL,W MIDLANDS,ENGLAND

[3] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,SEMICOND MAT IRC,LONDON SW7 2BZ,ENGLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1997年 / 15卷 / 03期

关键词：

D O I：

10.1116/1.580732

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Strain relaxation during the growth of InAs thin films on GaAs substrates by molecular beam epitaxy has been studied by scanning tunneling microscopy (STM). A two-dimensional growth mode operates for InAs layers grown on both GaAs(110) and GaAs(111)A. Detailed STM profiles of the InAs surfaces reveal small relaxation phenomena that are related to the presence of misfit dislocations at the buried heterointerface. The origin of these surface features is discussed, and their utility in studying the relaxation of strained semiconductor thin films is demonstrated. (C) 1997 American Vacuum Society.

引用

页码：915 / 918

页数：4

共 17 条

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