Photoluminescence of Ge nanostructures grown by gas source molecular beam epitaxy on silicon (1 1 8) surface

被引：2

作者：

Serpentini, M

Souifi, A

Abdallah, M

Berbezier, I

Bremond, G

机构：

[1] Inst Natl Sci Appl, Phys Mat Lab, CNRS, UMR 5511, F-69621 Villeurbanne, France

[2] Ctr Rech Mecanismes Croissance Cristalline, CNRS, F-13288 Marseille 9, France

来源：

JOURNAL OF LUMINESCENCE | 1998年 / 80卷 / 1-4期

关键词：

photoluminescence; Ge island; type-II interface;

D O I：

10.1016/S0022-2313(98)00165-3

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper, we present a photoluminescence (PL) study of Si/Ge/SiGe/Si structures grown by gas source molecular beam epitaxy on an (1 1 8) undulated surface with various Ge coverage. Nucleation and growth of Ge films is obtained by the Stranski-Krastanov mechanism. The influence of the substrate orientation on the changeover 2D-3D growth mode is investigated. Furthermore, we show the use of growing an SiGe wetting layer to control the uniformity of the Ge island size. The PL signal related to the Ge islands is found to be highly dependent of the power excitation and is observed up to room temperature. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：515 / 518

页数：4

共 11 条

[1]

ABDALLAH M, UNPUB THIN SOLID FIM

[2]

BEBB HB, 1972, SEMICONDUCT SEMIMET, V8, pCH4

[3] DISLOCATION-FREE STRANSKI-KRASTANOW GROWTH OF GE ON SI(100) [J].