Precontact surface chemistry effects on CdS/CdTe solar cell performance and stability

被引:22
作者
Albin, D [1 ]
Levi, D [1 ]
Asher, S [1 ]
Balcioglu, A [1 ]
Dhere, R [1 ]
Hiltner, J [1 ]
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
来源
CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年
关键词
D O I
10.1109/PVSC.2000.915907
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Carbon-based dag pastes containing mixtures of various Cu-, Sb-, Hg-, and Bi-telluride compounds offer convenient backcontact materials for CdS/CdTe superstrate solar cells. Open-circuit stress tests at 100 degreesC and 1.5 to 2.0 suns illumination show that the performance of devices utilizing Cu-based pastes improves during the first 1-10 hours of stress. Of these, the best stability is exhibited by pastes containing no HgTe. Carbon-based dag pastes can be viewed as sacrificial dopant sources on properly treated CdTe surfaces. CdTe surfaces consisting of thick Te layers, resulting from nitric-phosphoric (NP) acid etches, show better incorporation of active Cu-based dopants than thinner Te layers. Deep-level transient spectroscopy (DLTS) confirms the presence of acceptorlike defects at similar to E-v+0.3 eV believed to be associated with Cute substitutional defects in NP-treated devices. The presence of Te and its ability to getter Cu is paralleled by significant improvements in CdTe device stability.
引用
收藏
页码:583 / 586
页数:4
相关论文
共 15 条
[1]  
[Anonymous], 1995, Proceedings of the 13th EU PVSEC
[2]  
[Anonymous], 1998, Proc. 2nd World Conf. Photovoltaic Energy Conversion
[3]  
BALCIOGLU A, 2000, IN PRESS J APPL PHYS
[4]   Annealing conditions for intrinsic CdTe [J].
Berding, MA .
APPLIED PHYSICS LETTERS, 1999, 74 (04) :552-554
[5]  
HILTNER J, 1998, 15 NREL SNL PHOT PRO
[6]   Study of CdTe etching process in alcoholic solutions of bromine [J].
Kotina, IM ;
Tukhkonen, LM ;
Patsekina, GV ;
Shchukarev, AV ;
Gusinskii, GM .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (08) :890-894
[7]  
LEVI D, 2000, IN PRESS PROG PHOTOV
[8]  
N Romeo, 1998, 2 WORLD C EXH PHOT S, P446
[9]   A PHOTOEMISSION DETERMINATION OF THE BAND DIAGRAM OF THE TE/CDTE INTERFACE [J].
NILES, DW ;
LI, XN ;
SHELDON, P ;
HOCHST, H .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (09) :4489-4493
[10]  
Rose DH, 1999, PROG PHOTOVOLTAICS, V7, P331, DOI 10.1002/(SICI)1099-159X(199909/10)7:5<331::AID-PIP257>3.0.CO