A PHOTOEMISSION DETERMINATION OF THE BAND DIAGRAM OF THE TE/CDTE INTERFACE

被引：79

作者：

NILES, DW ^{[1
]}

LI, XN ^{[1
]}

SHELDON, P ^{[1
]}

HOCHST, H ^{[1
]}

机构：

[1] UNIV WISCONSIN,CTR SYNCHROTRON RADIAT,STOUGHTON,WI 53589

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 09期

关键词：

D O I：

10.1063/1.359444

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two experiments designed to assist in understanding the physics of certain back contacts on p-type CdTe solar-cell devices are described. In the first experiment, x-ray photoelectron and Auger electron spectroscopies are used to show that etching CdTe in HNO3:H3PO4 results in a Te layer on the CdTe surface. In the second experiment, photoemission spectroscopy is used to explore the electronic properties of evaporated Te deposited on thin-film, polycrystalline p-CdTe in an effort to develop a band diagram for the Te/p-CdTe interface. The motivation for developing the band diagram derives from previous observations that chemically etching polycrystalline p-CdTe solar-cell device material before application of the back contact reduces the series resistance of the device. The key results are that the evaporated Te overlayer is p type and that the valence-band offset between Te and p-CdTe is favorable for low-series-resistance contact, ΔE v=0.26±0.1 eV. © 1995 American Institute of Physics.

引用

页码：4489 / 4493

页数：5

共 24 条

[1]

Briggs D., 1984, PRACTICAL SURFACE AN, P459

[2] ACOUSTIC DEFORMATION POTENTIALS AND HETEROSTRUCTURE BAND OFFSETS IN SEMICONDUCTORS [J].

CARDONA, M ;

CHRISTENSEN, NE .

PHYSICAL REVIEW B, 1987, 35 (12) :6182-6194

[3]

Chu T. L., 1993, Progress in Photovoltaics: Research and Applications, V1, P31, DOI 10.1002/pip.4670010105

[4] THIN-FILM CDS/CDTE SOLAR-CELLS [J].

DANAHER, WJ ;

LYONS, LE ;

MORRIS, GC .

APPLICATIONS OF SURFACE SCIENCE, 1985, 22-3 (MAY) :1083-1090

[5]

DANAHER WJ, 1988, APPL SURF SCI, V27, P338

[6]

DEBBAGH F, 1993, SOL ENERGY MATER SOL, V31

[7] SCHOTTKY BARRIERS AND INTERFACE REACTIONS ON CHEMICALLY ETCHED N-CDTE SINGLE-CRYSTALS [J].

DHARMADASA, IM ;

MCLEAN, AB ;

PATTERSON, MH ;

WILLIAMS, RH .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (07) :404-412

[8] OHMIC CONTACTS AND DOPING OF CDTE [J].

FAHRENBRUCH, AL .

SOLAR CELLS, 1987, 21 :399-412

[9]

FEREKIDES C, 1994, 12TH P EUR PHOT SOL

[10] NOBLE-METAL CDTE INTERFACE FORMATION [J].

FRIEDMAN, DJ ;

LINDAU, I ;

SPICER, WE .

PHYSICAL REVIEW B, 1988, 37 (02) :731-739

← 1 2 3 →