A PHOTOEMISSION DETERMINATION OF THE BAND DIAGRAM OF THE TE/CDTE INTERFACE

被引：79

作者：

NILES, DW ^{[1
]}

LI, XN ^{[1
]}

SHELDON, P ^{[1
]}

HOCHST, H ^{[1
]}

机构：

[1] UNIV WISCONSIN,CTR SYNCHROTRON RADIAT,STOUGHTON,WI 53589

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 09期

关键词：

D O I：

10.1063/1.359444

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Two experiments designed to assist in understanding the physics of certain back contacts on p-type CdTe solar-cell devices are described. In the first experiment, x-ray photoelectron and Auger electron spectroscopies are used to show that etching CdTe in HNO3:H3PO4 results in a Te layer on the CdTe surface. In the second experiment, photoemission spectroscopy is used to explore the electronic properties of evaporated Te deposited on thin-film, polycrystalline p-CdTe in an effort to develop a band diagram for the Te/p-CdTe interface. The motivation for developing the band diagram derives from previous observations that chemically etching polycrystalline p-CdTe solar-cell device material before application of the back contact reduces the series resistance of the device. The key results are that the evaporated Te overlayer is p type and that the valence-band offset between Te and p-CdTe is favorable for low-series-resistance contact, ΔE v=0.26±0.1 eV. © 1995 American Institute of Physics.

引用

页码：4489 / 4493

页数：5

共 24 条

[11]

Green M. A., 1994, Progress in Photovoltaics: Research and Applications, V2, P231, DOI 10.1002/pip.4670020307

[12] TIGHT-BINDING THEORY OF HETEROJUNCTION BAND LINEUPS AND INTERFACE DIPOLES [J].

HARRISON, WA ;

TERSOFF, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :1068-1073

[13]

MADELUNG O, 1983, LANDHOLTBORNSTEIN NE, V17, P106

[14] EVALUATION OF A NEW VUV SOFT-X-RAY TOROIDAL GRATING MONOCHROMATOR WITH A MOVABLE EXIT SLIT [J].

MANCINI, DC ;

BISSEN, M ;

RIOUX, D ;

PATEL, R ;

ROGERS, G ;

BRODSKY, EL ;

HOCHST, H .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1992, 63 (01) :1269-1273

[15] A REVIEW OF OHMIC AND RECTIFYING CONTACTS ON CADMIUM TELLURIDE [J].

PONPON, JP .

SOLID-STATE ELECTRONICS, 1985, 28 (07) :689-706

[16] X-RAY PHOTOELECTRON AND AUGER-ELECTRON SPECTROSCOPIC STUDY OF THE CDTE SURFACE RESULTING FROM VARIOUS SURFACE PRETREATMENTS - CORRELATION OF PHOTOELECTROCHEMICAL AND CAPACITANCE-POTENTIAL BEHAVIOR WITH SURFACE CHEMICAL-COMPOSITION [J].

RICCO, AJ ;

WHITE, HS ;

WRIGHTON, MS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :910-915

[17] ZNTE - A POTENTIAL INTERLAYER TO FORM LOW-RESISTANCE BACK CONTACTS IN CDS/CDTE SOLAR-CELLS [J].

RIOUX, D ;

NILES, DW ;

HOCHST, H .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (12) :8381-8385

[18] ZNO/CDS/CUINSE2 THIN-FILM SOLAR-CELLS WITH IMPROVED PERFORMANCE [J].

STOLT, L ;

HEDSTROM, J ;

KESSLER, J ;

RUCKH, M ;

VELTHAUS, KO ;

SCHOCK, HW .

APPLIED PHYSICS LETTERS, 1993, 62 (06) :597-599

[19] DELIBERATE MODIFICATION OF THE BEHAVIOR OF N-TYPE CADMIUM TELLURIDE-ELECTROLYTE INTERFACES BY SURFACE ETCHING - REMOVAL OF FERMI LEVEL PINNING [J].

TANAKA, S ;

BRUCE, JA ;

WRIGHTON, MS .

JOURNAL OF PHYSICAL CHEMISTRY, 1981, 85 (25) :3778-3787

[20]

TANUMA S, 1991, SURF INTERFACE ANAL, V13, P911

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