Rational growth of highly oriented amorphous silicon nanowire films

被引：24

作者：

Chen, XH ^{[1
]}

Xing, YJ ^{[1
]}

Xu, J ^{[1
]}

Xiang, J ^{[1
]}

Yu, DP ^{[1
]}

机构：

[1] Peking Univ, Sch Phys, Dept Phys,Electron Microscopy Lab, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

来源：

CHEMICAL PHYSICS LETTERS | 2003年 / 374卷 / 5-6期

基金：

中国国家自然科学基金; 高等学校博士学科点专项科研基金;

关键词：

D O I：

10.1016/S0009-2614(03)00781-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Amorphous silicon nanowire films were rationally synthesized using a simple approach. The films consist of highly oriented nanowires of 30 mum in length and 20-80 nm in diameter. The morphology, microstructure features, and chemical composition of the nanowires were analyzed using electron microscopy and Raman spectroscopy. A novel model concerning solid-liquid-solid phases was proposed to explain the growth mechanism of the nanowires. This approach should be very useful to direct the controlled growth of nanomaterials. (C) 2003 Published by Elsevier Science B.V.

引用

页码：626 / 630

页数：5

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