Monocliniclike local atomic structure in amorphous ZrO2 thin film

被引:23
作者
Cho, Deok-Yong [1 ,2 ]
Jung, Hyung-Suk [3 ,4 ]
Kim, Jeong Hwan [3 ,4 ]
Hwang, Cheol Seong [3 ,4 ]
机构
[1] Seoul Natl Univ, CSCMR, Dept Phys & Astron, Seoul 151747, South Korea
[2] Seoul Natl Univ, FPRD, Dept Phys & Astron, Seoul 151747, South Korea
[3] Seoul Natl Univ, Dept Mat Sci & Engn, WCU Hybrid Mat Program, Seoul 151744, South Korea
[4] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea
关键词
GATE DIELECTRICS; ZIRCONIA; TEMPERATURE; SCATTERING; CONSTANTS;
D O I
10.1063/1.3497077
中图分类号
O59 [应用物理学];
学科分类号
摘要
The local atomic structure and electronic structure of amorphous ZrO2 (a-ZrO2) thin film were examined using the Zr K- and O K- edge x-ray absorption spectroscopy and x-ray photoelectron spectroscopy. It was found that a monoclinic local structure is stabilized in several nanometers-thick a-ZrO2 films due to the structural disorder. The distinct local structure in a-ZrO2 from the ordinary tetragonal ZrO2 (t-ZrO2) films results in different electronic structure with a decrease in the band gap by 0.5 eV. The reduced band gap and dielectric constant of a-ZrO2 suggest inferior gate leakage current performances compared to the t-ZrO2 films. (C) 2010 American Institute of Physics. [doi:10.1063/1.3497077]
引用
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页数:3
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