Well-aligned graphene field emission arrays were fabricated on copper foils via simple photolithography and wet etching techniques. The method offered high-ordered micro sized graphene pattern in the array elements. Field emission measurement revealed a turn-on field of 7.2 V/mu m at 100 nA/cm(2) and a good emission current stability. Exposed graphene edges were produced on each array element edge and found to be the significant contributors to the emission current. Owing to the obvious advantages of low cost and easy for scale-up production, this method demonstrates the feasibility of utilizing such graphene field emission array configurations in display applications. (C) 2011 American Institute of Physics. [doi:10.1063/1.3603963]
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Amaratunga GAJ, 1996, APPL PHYS LETT, V68, P2529, DOI 10.1063/1.116173
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Beijing Vacuum Elect Res Inst, Natl Lab High Power Vacuum Elect, Beijing 100016, Peoples R ChinaBeijing Vacuum Elect Res Inst, Natl Lab High Power Vacuum Elect, Beijing 100016, Peoples R China
Ding, MQ
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Li, XH
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Beijing Vacuum Elect Res Inst, Natl Lab High Power Vacuum Elect, Beijing 100016, Peoples R ChinaBeijing Vacuum Elect Res Inst, Natl Lab High Power Vacuum Elect, Beijing 100016, Peoples R China
Li, XH
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Bai, GD
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Beijing Vacuum Elect Res Inst, Natl Lab High Power Vacuum Elect, Beijing 100016, Peoples R ChinaBeijing Vacuum Elect Res Inst, Natl Lab High Power Vacuum Elect, Beijing 100016, Peoples R China
Bai, GD
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Feng, JJ
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Beijing Vacuum Elect Res Inst, Natl Lab High Power Vacuum Elect, Beijing 100016, Peoples R ChinaBeijing Vacuum Elect Res Inst, Natl Lab High Power Vacuum Elect, Beijing 100016, Peoples R China
Feng, JJ
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Zhang, FQ
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Beijing Vacuum Elect Res Inst, Natl Lab High Power Vacuum Elect, Beijing 100016, Peoples R ChinaBeijing Vacuum Elect Res Inst, Natl Lab High Power Vacuum Elect, Beijing 100016, Peoples R China
Zhang, FQ
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Liao, FJ
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Beijing Vacuum Elect Res Inst, Natl Lab High Power Vacuum Elect, Beijing 100016, Peoples R ChinaBeijing Vacuum Elect Res Inst, Natl Lab High Power Vacuum Elect, Beijing 100016, Peoples R China
机构:
Beijing Vacuum Elect Res Inst, Natl Lab High Power Vacuum Elect, Beijing 100016, Peoples R ChinaBeijing Vacuum Elect Res Inst, Natl Lab High Power Vacuum Elect, Beijing 100016, Peoples R China
Ding, MQ
;
Li, XH
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Beijing Vacuum Elect Res Inst, Natl Lab High Power Vacuum Elect, Beijing 100016, Peoples R ChinaBeijing Vacuum Elect Res Inst, Natl Lab High Power Vacuum Elect, Beijing 100016, Peoples R China
Li, XH
;
Bai, GD
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Beijing Vacuum Elect Res Inst, Natl Lab High Power Vacuum Elect, Beijing 100016, Peoples R ChinaBeijing Vacuum Elect Res Inst, Natl Lab High Power Vacuum Elect, Beijing 100016, Peoples R China
Bai, GD
;
Feng, JJ
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Beijing Vacuum Elect Res Inst, Natl Lab High Power Vacuum Elect, Beijing 100016, Peoples R ChinaBeijing Vacuum Elect Res Inst, Natl Lab High Power Vacuum Elect, Beijing 100016, Peoples R China
Feng, JJ
;
Zhang, FQ
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Beijing Vacuum Elect Res Inst, Natl Lab High Power Vacuum Elect, Beijing 100016, Peoples R ChinaBeijing Vacuum Elect Res Inst, Natl Lab High Power Vacuum Elect, Beijing 100016, Peoples R China
Zhang, FQ
;
Liao, FJ
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Beijing Vacuum Elect Res Inst, Natl Lab High Power Vacuum Elect, Beijing 100016, Peoples R ChinaBeijing Vacuum Elect Res Inst, Natl Lab High Power Vacuum Elect, Beijing 100016, Peoples R China