Comparison of hydrogenated amorphous silicon germanium and nanocrystalline silicon for multijunction solar cells - Pros, cons, and status

被引：9

作者：

Yang, J ^{[1
]}

Yan, BJ ^{[1
]}

Yue, GZ ^{[1
]}

Guha, S ^{[1
]}

机构：

[1] United Solar Ovan Corp, Troy, MI 48084 USA

来源：

Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005 | 2005年

关键词：

D O I：

10.1109/PVSC.2005.1488394

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A comparison is made of hydrogenated amorphous silicon germanium (a-SiGe:H) and hydrogenated nanocrystalline silicon (nc-Si:H) for use in the bottom cell of a multijunction structure. In our laboratory, an initial active-area cell efficiency of 14.6% has been achieved in both a-Si:H/a-SiGe:H/a-SiGe:H and a-Si:H/a-SiGe:H/nc-Si:H triple-junction structures. Their light-soaked stabilized efficiencies are also similar. Pros, cons, issues, and status for using these two low bandgap absorber materials in multijunction structures are presented.

引用

页码：1359 / 1364

页数：6

共 16 条

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[12]

Yan BJ, 2003, MATER RES SOC SYMP P, V762, P309

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