1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy

被引：57

作者：

Ustinov, VM

Zhukov, AE

Maleev, NA

Kovsh, AR

Mikhrin, SS

Volovik, BV

Musikhin, YG

Shernyakov, YM

Maximov, MV

Tsatsul'nikov, AF

Ledentsov, NN

Alferov, ZI

Lott, JA

Bimberg, D

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] USAF, Inst Technol, Wright Patterson AFB, OH 45433 USA

[3] Tech Univ Berlin, Inst Festkorperphys, D-1000 Berlin, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷

关键词：

low dimensional structures; molecular beam epitaxy; semiconducting III-V materials; laser diodes;

D O I：

10.1016/S0022-0248(01)01006-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Molecular beam epitaxy growth of InAs/InGaAs quantum dot (QD) structures on GaAs substrates for 1.3 mum laser applications is discussed. Long-stripe edge-emitting lasers demonstrate low threshold current density (< 100 A/cm(2)), high differential efficiency (> 50%) and low internal loss (similar to1-2 cm(-1)). Maximum output continuous-wave power for broad-area lasers is as high as 2.7 W. Narrow stripe (7 mum) lasers demonstrate single transverse mode operation with the maximum kink-free power of 110 mW. 1.3 mum vertical cavity surface emitting lasers were successfully fabricated from the structures with three QD planes inserted into the optical microcavity with AlO-GaAs Bragg: reflectors. The output power is 220 mW at a drive current of 2.4 mA under pulsed mode for the device with the 8 x 8 mum oxidized aperture. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：1155 / 1161

页数：7

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