Structural properties of hot wire a-Si:H films deposited at rates in excess of 100 A/s

The structure of a-Si:H, deposited at rates in excess of 100 Angstrom /s by the hot wire chemical vapor deposition technique, has been examined by x-ray diffraction (XRD), Raman spectroscopy, H evolution, and small-angle x-ray scattering (SAXS). The films examined in this study were chosen to have roughly the same bonded H content C-H as probed by infrared spectroscopy. As the film deposition rate R-d is increased from 5 to > 140 Angstrom /s, we find that the short range order (from Raman), the medium range order (from XRD), and the peak position of the H evolution peak are invariant with respect to deposition rate, and exhibit structure consistent with a state-of-the-art, compact a-Si:H material deposited at low deposition rates. The only exception to this behavior is the SAXS signal, which increases by a factor of similar to 100 over that for our best, low H content films deposited at similar to5 Angstrom /s. We discuss the invariance of the short and medium range order in terms of growth models available in the literature, and relate changes in the film electronic structure (Urbach edge, as-grown defect density) to the increase in the SAXS signals. We also note the invariance of the saturated defect density versus R-d, measured after light soaking, and discuss possible reasons why the increase in the microvoid density apparently does not play a role in the Staebler-Wronski effect for this type of material. (C) 2001 American Institute of Physics.