Direct structural evidences of Mn11Ge8 and Mn5Ge2 clusters in Ge0.96Mn0.04 thin films

被引：62

作者：

Wang, Yong ^{[1
,2
]}

Zou, Jin ^{[1
,2
]}

Zhao, Zuoming ^{[3
]}

Han, Xinhai ^{[3
]}

Zhou, Xiaoyu ^{[3
]}

Wang, Kang L. ^{[3
]}

机构：

[1] Univ Queensland, Sch Engn, Brisbane, Qld 4072, Australia

[2] Univ Queensland, Ctr Microscopy & Microanal, Brisbane, Qld 4072, Australia

[3] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 10期

关键词：

D O I：

10.1063/1.2884527

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mn-rich clusters in Mn-doped Ge thin films epitaxially grown on Ge (001) have been investigated by various transmission electron microscopy techniques. Both the mysterious Mn11Ge8 and the hexagonal Mn5Ge2 (a=0.72 nm and c=1.3 nm) clusters were confirmed to coexist in the thicker Ge0.96Mn0.04 film (80 nm). Their possible formation mechanism is attributed to the existence of ordered stacking faults. The fact that no Mn-rich clusters found in thinner films (<=40 nm) suggests that, for a given Mn concentration and growth/annealing condition, a critical thickness exists for the formation of Mn-rich clusters. (C) 2008 American Institute of Physics.

引用

页数：3

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