Interface band profiles of Mott-insulator/Nb : SrTiO3 heterojunctions as investigated by optical spectroscopy

被引：39

作者：

Nakamura, Masao ^{[1
,2
]}

Sawa, Akihito ^{[3
]}

Fujioka, Jun ^{[4
]}

Kawasaki, Masashi ^{[1
,2
,5
]}

Tokura, Yoshinori ^{[1
,2
,4
,6
]}

机构：

[1] RIKEN, ASI, Cross Correlated Mat Res Grp CMRG, Wako, Saitama 3510198, Japan

[2] RIKEN, ASI, CERG, Wako, Saitama 3510198, Japan

[3] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058562, Japan

[4] Japan Sci & Technol Agcy JST, Exploratory Res Adv Technol ERATO, Multiferro Project, Kawaguchi, Saitama 3320012, Japan

[5] Tohoku Univ, WPI AIMR, Sendai, Miyagi 9808577, Japan

[6] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 20期

基金：

日本学术振兴会;

关键词：

RESONANT-PHOTOEMISSION; LA1-XSRXMNO3;

D O I：

10.1103/PhysRevB.82.201101

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Heterointerfaces of correlated electron oxides provide a good laboratory to explore novel electronic states induced by the coupling among spin, charge, and orbital degrees of freedom. For the detail understanding of the complex interface states, it is indispensable to elucidate the interface band profiles of correlated electron materials. Here we report the band profiles of Mott-insulator/Nb: SrTiO3 heterojunctions revealed by optical-spectroscopic and transport measurements. Photocurrent action spectra indicate the existence of the band bending and band discontinuity similar to the rigid-band interface and we construct a band lineup of Mott insulators based on the rigid-band picture. We also estimate the width of the depletion layer in a Mott insulator by investigating thickness dependence of photocurrent amplitude.

引用

页数：4

共 24 条

[1] RESONANT PHOTOEMISSION-STUDY OF ND2-XCEXCUO4-Y - NATURE OF ELECTRONIC STATES NEAR THE FERMI LEVEL [J].

ALLEN, JW ;

OLSON, CG ;

MAPLE, MB ;

KANG, JS ;

LIU, LZ ;

PARK, JH ;

ANDERSON, RO ;

ELLIS, WP ;

MARKERT, JT ;

DALICHAOUCH, Y ;

LIU, R .

PHYSICAL REVIEW LETTERS, 1990, 64 (05) :595-598

[2] Rectifying properties of the La2CuO4/Nb-0.7 wt%-doped SrTiO3 heterojunction [J].

Fang, Jin ;

Cui, Yimin ;

Zhang, Yong ;

Qiu, Ming .

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2007, 458 (1-2) :51-53

[3] AN N-IN0.53GA0.47AS-N-INP RECTIFIER [J].

FORREST, SR ;

KIM, OK .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) :5838-5842

[4] Electrical properties and colossal electroresistance of heteroepitaxial SrRuO3/SrTi1-xNbxO3 (0.0002≤x≤0.02) Schottky junctions [J].

Fujii, T. ;

Kawasaki, M. ;

Sawa, A. ;

Kawazoe, Y. ;

Akoh, H. ;

Tokura, Y. .

PHYSICAL REVIEW B, 2007, 75 (16)

[5] Characterization of the Schottky barrier in SrRuO3/Nb:SrTiO3 junctions [J].

Hikita, Y. ;

Kozuka, Y. ;

Susaki, T. ;

Takagi, H. ;

Hwang, H. Y. .

APPLIED PHYSICS LETTERS, 2007, 90 (14)

[6] In vacuo photoemission study of atomically controlled La1-xSrxMnO3 thin films:: Composition dependence of the electronic structure -: art. no. 155420 [J].

Horiba, K ;

Chikamatsu, A ;

Kumigashira, H ;

Oshima, M ;

Nakagawa, N ;

Lippmaa, M ;

Ono, K ;

Kawasaki, M ;

Koinuma, H .

PHYSICAL REVIEW B, 2005, 71 (15)

[7] Good rectifying characteristic in p-n junctions composed of La0.67Ca0.33MnO3-δ/Nb-0.7 wt %-doped SrTiO3 [J].

Hu, FX ;

Gao, J ;

Sun, JR ;

Shen, BG .

APPLIED PHYSICS LETTERS, 2003, 83 (09) :1869-1871

[8] Modulation doping near Mott-insulator heterojunctions [J].

Lee, Wei-Cheng ;

MacDonald, A. H. .

PHYSICAL REVIEW B, 2006, 74 (07)

[9] Buffer layer-induced unusual rectifying behavior in La0.67Ca0.33MnO3/LaMnO3/SrTiO3:Nb junctions [J].

Lue, W. M. ;

Sun, J. R. ;

Chen, Y. Z. ;

Shen, B. G. .

APPLIED PHYSICS LETTERS, 2009, 94 (15)

[10] Chemical potential shift in La1-xSrxMnO3:: Photoemission test of the phase separation scenario [J].

Matsuno, J ;

Fujimori, A ;

Takeda, Y ;

Takano, M .

EUROPHYSICS LETTERS, 2002, 59 (02) :252-257

← 1 2 3 →