Microstructure and electronic investigations of carbon nitride films deposited by RF magnetron sputtering

被引：18

作者：

Lagrini, A

Charvet, S

Benlahsen, M

Debiemme-Chouvy, C

Deslouis, C

Cachet, H

机构：

[1] UPRES, EA 2081, Phys Mat Condensee Lab, Fac Sci Amiens, F-80039 Amiens, France

[2] Univ Paris 06, UPR 15, CNRS, LISE, F-75252 Paris, France

来源：

THIN SOLID FILMS | 2005年 / 482卷 / 1-2期

关键词：

carbon; nitrides; sputtering; Raman spectroscopy;

D O I：

10.1016/j.tsf.2004.11.154

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The analysis of the relationship between the local microstructure evolution versus nitrogen content and electrical properties of amorphous carbon nitride films (a-CNx) deposited by radio frequency (RF) magnetron sputtering is reported. Combined TRIM code, XPS measurements and Raman scattering spectroscopy are used to investigate the microstructure of a-CNx, films, in their as-deposited state, in terms of surface processes, nitrogen incorporation within the films and the Csp(2) content. These experiments were completed by dark electrical conductivity measurements performed at room temperature in coplanar configuration. A good correlation is observed between the local microstructure and the conductivity at different amounts of nitrogen. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：41 / 44

页数：4

共 20 条

[1] The electrochemical reactivity of amorphous hydrogenated carbon nitrides for varying nitrogen contents: the role of the substrate [J].