Diluted II-VI oxide semiconductors with multiple band gaps

被引：251

作者：

Yu, KM ^{[1
]}

Walukiewicz, W

Wu, J

Shan, W

Beeman, JW

Scarpulla, MA

Dubon, OD

Becla, P

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[3] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 91卷 / 24期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.91.246403

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the realization of a new mult-band-gap semiconductor. Zn1-yMnyOxTe1-x alloys have been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn1-yMnyTe host. When only 1.3% of Te atoms are replaced with oxygen in a Zn0.88Mn0.12Te crystal the resulting band structure consists of two direct band gaps with interband transitions at similar to1.77 and 2.7 eV. This remarkable modification of the band structure is well described by the band anticrossing model. With multiple band gaps that fall within the solar energy spectrum, Zn1-yMnyOxTe1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.

引用

页数：4

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