Integrated a-Si:H/pentacene inorganic/organic complementary circuits

被引：30

作者：

Bonse, M ^{[1
]}

Thomasson, DB ^{[1
]}

Klauk, H ^{[1
]}

Gundlach, DJ ^{[1
]}

Jackson, TN ^{[1
]}

机构：

[1] Penn State Univ, Dept Elect Engn, Elect Mat & Proc Lab, University Pk, PA 16802 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746347

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed a low-cost fabrication process for complementary circuits using integrated organic and inorganic thin film transistors (TFTs). In these circuits, a-Si:H TFTs are used as the n-channel and pentacene organic TFTs as the p-channel devices. These circuits show high switching gain and excellent logic level conservation, with very low off-currents during static operation. Gate delay of our circuits, measured using ring oscillators, is as low as 5 mu s, the fastest speed reported for circuits using organic transistors.

引用

页码：249 / 252

页数：4

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