Light emission from organic single-crystal field-effect transistors

We have demonstrated electroluminescence front field-effect transistors (FETs) of an organic single crystal. We used top-contact-configuration FETs with An and Al (or MgAg) as source and drain electrodes, respectively. The devices exhibited p-type unipolar behavior and light emission depending on gate voltages and metal species of the drain contact. Moreover, the light intensity increased in the saturation region of drain current.