Study on the doping effect of Li-doped ZnO film

被引：54

作者：

Jeong, S. H. ^{[1
,2
]}

Park, B. N. ^{[1
,2
]}

Lee, S. -B. ^{[1
,2
]}

Boo, J. -H. ^{[1
,2
]}

机构：

[1] Sungkyunkwan Univ, Dept Chem, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, Inst Basic Sci, Suwon 440746, South Korea

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 16期

关键词：

Li-doped ZnO films; RF magnetron sputtering; structural and electrical properties;

D O I：

10.1016/j.tsf.2007.07.075

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

Zinc oxide (ZnO) is an excellent piezoelectric material with simple composition. ZnO film is applied to the piezoelectric devices because it has high resistivity and highly oriented direction at c-axis. Structural and electrical properties in ZnO films are influenced by deposition conditions. Lithium-doped ZnO (LZO) films were deposited by RF magnetron sputtering method using Li-doped ZnO ceramic target with various ratios (0 to 10 wt.% LiCl dopant). LZO films revealed high resistivity of above 10(7) Omega cm with smooth surface when they were deposited with 4% LiCl-doped ZnO target under room temperature. However, their c-axis orientation was worse than the c-axis orientation of pure ZnO films. We have also studied on structural, optical and electrical properties of the ZnO films by XRD, AFM, SEM, XPS, and 4-point probe analyses. We concluded that LZO films were deposited with 4 wt.% LiCl-doped ZnO target and were apposite for piezoelectrical application. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：5586 / 5589

页数：4

共 13 条

[1]

Influence of gamma radiation on the absorption spectra and optical energy gap of Li-doped ZnO thin films [J].