Properties of ZnO:In film prepared by sputtering of facing ZnO:In and Zn targets

被引：26

作者：

Tominaga, K ^{[1
]}

Umezu, N ^{[1
]}

Mori, I ^{[1
]}

Ushiro, T ^{[1
]}

Moriga, T ^{[1
]}

Nakabayashi, I ^{[1
]}

机构：

[1] Univ Tokushima, Fac Engn, Tokushima 770, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1998年 / 16卷 / 03期

关键词：

D O I：

10.1116/1.581261

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

ZnO:In films were prepared by a sputtering method with targets facing. The lowest resistivity film is obtained at a substrate temperature of 150 degrees C using a ZnO target doped with 3 wt % In2O3. At substrate temperatures above 300 degrees C the resistivity of the film increases as the carrier concentration decreases. This implies a significant decrease in the donor impurity, ascribed to evaporation of the indium during film growth. From experiments with an additional Zn supply during deposition, we found that all of the doped indium is ionized as donor in ZnO:In, and that evaporation of depositing indium atoms is enhanced above 250 degrees C. (C) 1998 American Vacuum Society. [S0734-2101(98)05603-6].

引用

页码：1213 / 1217

页数：5

共 9 条

[1] OPTICAL AND ELECTRICAL-PROPERTIES OF GA2O3-DOPED ZNO FILMS PREPARED BY R.F. SPUTTERING [J].

CHOI, BH ;

IM, HB ;

SONG, JS ;

YOON, KH .

THIN SOLID FILMS, 1990, 193 (1-2) :712-720

[2] SUBSTRATE-TEMPERATURE DEPENDENCE OF ELECTRICAL-PROPERTIES OF ZNO-AL EPITAXIAL-FILMS ON SAPPHIRE (12BAR10) [J].

IGASAKI, Y ;

SAITO, H .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) :2190-2195

[3] LOW RESISTIVITY INDIUM TIN OXIDE TRANSPARENT CONDUCTIVE FILMS .2. EFFECT OF SPUTTERING VOLTAGE ON ELECTRICAL PROPERTY OF FILMS [J].

ISHIBASHI, S ;

HIGUCHI, Y ;

OTA, Y ;

NAKAMURA, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03) :1403-1406

[4] GROUP-III IMPURITY DOPED ZINC-OXIDE THIN-FILMS PREPARED BY RF MAGNETRON SPUTTERING [J].

MINAMI, T ;

SATO, H ;

NANTO, H ;

TAKATA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (10) :L781-L784

[5]

MINAMI T, 1985, JPN J APPL PHYS PT 2, V24, pL609

[6]

MIZUHASHI M, 1996, T MAT RES SOC JPN, V20, P505

[7] Transparent ZnO:Al films prepared by co-sputtering of ZnO:Al with either a Zn or an Al target [J].

Tominaga, K ;

Kataoka, M ;

Manabe, H ;

Ueda, T ;

Mori, I .

THIN SOLID FILMS, 1996, 290 :84-87

[8] Film properties of ZnO:Al prepared by cosputtering of ZnO:Al and either Zn or Al targets [J].

Tominaga, K ;

Manabe, H ;

Umezu, N ;

Mori, I ;

Ushiro, T ;

Nakabayashi, I .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (03) :1074-1079

[9] RADIATION EFFECT DUE TO ENERGETIC OXYGEN-ATOMS ON CONDUCTIVE AL-DOPED ZNO FILMS [J].

TOMINAGA, K ;

KURODA, K ;

TADA, O .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (07) :1176-1180

← 1 →