Misfit dislocations in laser-ablated heteroepitaxial YBa2Cu3O7-delta on MgO(001)

被引：6

作者：

Aindow, M

Norris, DJ

Cheng, TT

机构：

[1] School of Metallurgy and Materials, The University of Birmingham, Edgbaston, Birmingham

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1996年 / 74卷 / 04期

关键词：

D O I：

10.1080/095008396180218

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-resolution electron microscopy has been used to show that for epitaxial YBa2Cu3O7-delta thin films on MgO(001) with the '0 degrees' orientation, the interface between the substrate and deposit is semicoherent, rather than 'graphoepitaxial' as proposed previously. The misfit is accommodated by arrays of misfit dislocations with Burgers vectors 1/2[110], line directions [110] and a regular spacing of 3.3 nm.

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页码：267 / 272

页数：6

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