Efficient free-exciton recombination emission from diamond diode at room temperature

被引：34

作者：

Horiuchi, K ^{[1
]}

Kawamura, A ^{[1
]}

Ide, T ^{[1
]}

Ishikura, T ^{[1
]}

Takamura, K ^{[1
]}

Yamashita, S ^{[1
]}

机构：

[1] Tokyo Gas Co Ltd, Dept Res & Dev, Frontier Technol Lab, Tsurumi Ku, Yokohama, Kanagawa 2300045, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 3B期

关键词：

diamond; UV; light-emitting diode; free exciton; electroluminescence; sulfur-doping; n-type conductivity;

D O I：

10.1143/JJAP.40.L275

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Free-exciton recombination emission of 235 nm in wavelength is obtained by current injection at room temperature from a diamond-based pn junction diode composed of B-doped crystal grown by high-temperature, high-pressure synthesis and a S-doped homoepitaxial layer grown by the chemical vapor deposition method. The diode shows a clear rectification characteristic and a high external quantum efficiency of excitonic emission, 8 x 10(-5), which indicates that the excitonic emission of diamond is a good candidate for application to semiconductor UV-light-emitting devices. A defect-induced light emission and large leakage current indicate that a higher UV emission efficiency is expected with improvement of the junction quality.

引用

页码：L275 / L278

页数：4

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